Display device

ABSTRACT

Provided is a display device, which includes a substrate, a transistor, a capacitor and a light emitting unit. The transistor and the capacitor are disposed on the substrate. The light emitting unit is disposed on the substrate and arranged corresponding to the capacitor. The light emitting unit includes a first light emitting diode. The first light emitting diode is electrically connected with the transistor and overlaps the capacitor. The display device has favorable space utilization, provides a repair function, or reduces the probability of failure.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefits of U.S. provisionalapplication Ser. No. 62/339,107, filed on May 20, 2016, U.S. provisionalapplication Ser. No. 62/350,169, filed on Jun. 14, 2016, U.S.provisional application Ser. No. 62/361,543, filed on Jul. 13, 2016, andChina application serial no. 201611007129.0, filed on Nov. 16, 2016. Theentirety of each of the above-mentioned patent applications is herebyincorporated by reference herein and made a part of this specification.

BACKGROUND OF THE INVENTION Field of the Invention

The invention relates to a device and more particularly relates to adisplay device.

Description of Related Art

Light emitting diode (LED) display device has the advantages of activeluminescence, high brightness, high contrast, low power consumption,etc., and has a longer service life than organic light emitting diode(OLED) display device. Therefore, it has become one of the mostpotential display technologies in recent years. In order to meet therequirement of high resolution, LED display device is developed to becomposed of an active device array substrate and micron-sized lightemitting diodes that are arranged in an array.

SUMMARY OF THE INVENTION

The invention provides a display device that has favorable spaceutilization, provides a repair function, or reduces the probability offailure.

A display device of the invention includes a substrate, a transistor, acapacitor and a light emitting unit. The transistor and the capacitorare disposed on the substrate. The light emitting unit is disposed onthe substrate and arranged corresponding to the capacitor. The lightemitting unit includes a first light emitting diode. The first lightemitting diode is electrically connected with the transistor andoverlaps the capacitor.

A display device of the invention includes a substrate, a transistor anda light emitting unit. The transistor is disposed on the substrate. Thelight emitting unit is disposed on the substrate and includes aplurality of light emitting diodes. The light emitting diodes areelectrically connected with the transistor, and at least two of thelight emitting diodes are connected in parallel.

A display device of the invention includes a substrate, a transistor anda light emitting unit. The transistor is disposed on the substrate. Thelight emitting unit is disposed on the substrate and includes two lightemitting diodes. The two light emitting diodes are electricallyconnected with the transistor and respectively include a first sub lightemitting diode and a second sub light emitting diode. The two lightemitting diodes are connected in series, and the first sub lightemitting diode and the second sub light emitting diode are connected inparallel.

In order to make the aforementioned and other features and advantages ofthe invention more comprehensible, several embodiments accompanied withfigures are described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate exemplaryembodiments of the invention and, together with the description, serveto explain the principles of the invention.

FIG. 1 is a partial top view of the display device according to thefirst embodiment of the invention.

FIG. 2 is a partial cross-sectional view of the display device accordingto the first embodiment of the invention.

FIG. 3 is a partial equivalent circuit diagram of the display deviceaccording to the first embodiment of the invention.

FIG. 4 is a partial equivalent circuit diagram of the display deviceaccording to the second embodiment of the invention.

FIG. 5 is a partial equivalent circuit diagram of the display deviceaccording to the third embodiment of the invention.

FIG. 6 is a partial top view of the display device according to thefourth embodiment of the invention.

FIG. 7 is a partial cross-sectional view of the display device accordingto the fourth embodiment of the invention.

FIG. 8 is a partial equivalent circuit diagram of the display deviceaccording to the fourth embodiment of the invention.

FIG. 9 is a partial equivalent circuit diagram of the display deviceaccording to the fifth embodiment of the invention.

FIG. 10 is a partial equivalent circuit diagram of the display deviceaccording to the sixth embodiment of the invention.

FIG. 11 is a partial cross-sectional view of the display deviceaccording to the seventh embodiment of the invention.

FIG. 12 is a partial equivalent circuit diagram of the display deviceaccording to the eighth embodiment of the invention.

FIG. 13 is a diagram of the area X in FIG. 12.

FIG. 14 is a partial equivalent circuit diagram of the display deviceaccording to the ninth embodiment of the invention.

FIG. 15 is a diagram of the area Y in FIG. 14.

DESCRIPTION OF THE EMBODIMENTS

FIG. 1 is a partial top view of a display device according to the firstembodiment of the invention. FIG. 2 is a partial cross-sectional view ofthe display device according to the first embodiment of the invention.It should be noted that a display device 10 described in this embodimentincludes a plurality of light emitting units that are arranged in anarray, for example. Nevertheless, the invention is not limited thereto.Specifically, in this embodiment, the light emitting units include aplurality of red light emitting units RU, a plurality of green lightemitting units GU and a plurality of blue light emitting units BU.Although the light emitting units described in this embodiment emitlights of three different colors, the invention is not limited thereto.In other embodiments, the light emitting units may emit lights of thesame color or at least two different colors. Moreover, in thisembodiment, the capacitor is implemented by a circuit storage capacitorCst, for example, but the invention is not limited thereto. In otherembodiments, the capacitor that overlaps at least one of a plurality oflight emitting diodes may be any capacitor composed of two electrodeswith an insulating medium therebetween, which is commonly known to thoseskilled in the art.

Referring to FIG. 1 and FIG. 2, in this embodiment, the display device10 includes an array substrate 100, a plurality of red light emittingunits RU, a plurality of green light emitting units GU, a plurality ofblue light emitting units BU and an opposite substrate 110. Moreover,the opposite substrate 110 is omitted from FIG. 1.

In this embodiment, the array substrate 100 includes a substrate 102, aplurality of circuit storage capacitors Cst and a plurality oftransistors T disposed on the substrate 102. Besides, in thisembodiment, the array substrate 100 further includes a plurality of scanlines SL, a plurality of data lines DL, a plurality of first electrodes104 a and a plurality of second electrodes 104 b disposed on thesubstrate 102.

An extension direction of the scan lines SL is different from anextension direction of the data lines DL. Preferably, the extensiondirection of the scan lines SL is perpendicular to the extensiondirection of the data lines DL. Moreover, the scan lines SL and the datalines DL are located on different layers, and a gate insulating layer GIis disposed between the scan lines SL and the data lines DL (detailsthereof will be described later). Considering electrical conductivity,generally the scan lines SL and the data lines DL are formed of a metalmaterial. Nevertheless, the invention is not limited thereto. In otherembodiments, the scan lines SL and the data lines DL may be formed ofother conductive materials, such as an alloy, a nitride of the metalmaterial, an oxide of the metal material, a nitrogen oxide of the metalmaterial, or a stack layer of the metal material and the foregoingconductive materials, for example (but not limited thereto).

The transistors T are arranged in an array corresponding to the redlight emitting units RU, the green light emitting units GU and the bluelight emitting units BU. Specifically, one transistor T is electricallyconnected with one light emitting unit, wherein the light emitting unitmay be the red light emitting unit RU, the green light emitting unit GUor the blue light emitting unit BU, and each transistor T iselectrically connected with one of the scan lines SL and one of the datalines DL. In this embodiment, the transistors T are driving devices, forexample. Each transistor T includes a gate electrode G, the gateinsulating layer GI, a channel layer CH, a source electrode S and adrain electrode D, for example.

In this embodiment, the gate electrode G is electrically connected withthe corresponding scan line SL. From another aspect, the gate electrodesG and the scan lines SL belong to the same film layer. That is, the gateelectrodes G and the scan lines SL are formed of the same material.Moreover, the channel layer CFI can be located above the gate electrodeG. In this embodiment, a material of the channel layer CH includes (butnot limited to): amorphous silicon or an oxide semiconductor material,for example, wherein the oxide semiconductor material includes (but notlimited to): indium-gallium-zinc oxide (IGZO), zinc oxide, tin oxide(SnO), indium-zinc oxide, gallium-zinc oxide (GZO), zinc-tin oxide (ZTO)or indium-tin oxide, for example. That is, in this embodiment, thetransistor T is an amorphous silicon thin film transistor or an oxidesemiconductor thin film transistor, for example. Nevertheless, theinvention is not limited thereto. In other embodiments, the transistor Tmay be a low-temperature polysilicon thin film transistor, asilicon-based thin film transistor or a microcrystalline silicon thinfilm transistor. In addition, in this embodiment, the transistor T is abottom gate transistor. Nevertheless, the invention is not limitedthereto. In other embodiments, the transistor T may also be a top gatetransistor, such as a top gate oxide semiconductor thin film transistor.

Furthermore, the gate insulating layer GI is disposed between the gateelectrode G and the channel layer CH, wherein the gate insulating layerGI is formed conformally on the substrate 102 and covers the gateelectrode G. A material of the gate insulating layer GI may be (but notlimited to) an inorganic material, an organic material or a combinationof the foregoing, for example. The inorganic material is (but notlimited to) silicon oxide, silicon nitride, silicon oxynitride, or astack layer of at least two of the foregoing materials; and the organicmaterial is (but not limited to) a polymer material, such as polyimideresin, epoxy resin or acrylic resin, for example.

In addition, the source electrode S and the drain electrode D arelocated above the channel layer CH, and the source electrode S and thecorresponding data line DL are electrically connected. From anotheraspect, in this embodiment, the drain electrodes D, the sourceelectrodes S and the data lines DL belong to the same film layer. Thatis, the drain electrodes D, the source electrodes S and the data linesDL may be formed of the same material.

Moreover, in this embodiment, an insulating layer BP is further disposedto cover the transistor T, so as to protect the transistor T or achievesa planarization function. The insulating layer BP is formed conformallyon the substrate 102, and a material of the insulating layer BP may be(but not limited to) an inorganic material, an organic material, or acombination of the foregoing, for example. The inorganic material is(but not limited to) silicon oxide, silicon nitride, silicon oxynitride,or a stack layer of at least two of the foregoing materials; and theorganic material is (but not limited to) a polymer material, such aspolyimide resin, epoxy resin or acrylic resin, for example. In otherembodiments, the insulating layer BP may be a stack of multiple layersof materials. For example, after the source electrode S and the drainelectrode D are formed, an insulating layer of an inorganic material isfirst deposited on the source electrode S and the drain electrode D, andthen an insulating layer of an organic material is formed on theinsulating layer of the inorganic material.

The circuit storage capacitors Cst are arranged in an arraycorresponding to the red light emitting units RU, the green lightemitting units GU and the blue light emitting units BU. Specifically, inthis embodiment, one circuit storage capacitor Cst is located under onelight emitting unit, wherein the light emitting unit may be the redlight emitting unit RU, the green light emitting unit GU or the bluelight emitting unit BU. Moreover, in this embodiment, one circuitstorage capacitor Cst partially overlaps one light emitting unit.However, in other embodiments, one circuit storage capacitor Cst maycompletely overlap one light emitting unit. Each circuit storagecapacitor Cst includes an upper electrode 106 a and a lower electrode106 b.

In this embodiment, the upper electrodes 106 a, the source electrodes S,the drain electrodes D and the data lines DL may belong to one filmlayer while the lower electrodes 106 b, the gate electrodes G and thescan lines SL may belong to another film layer. Accordingly, the gateinsulating layer GI located between the upper electrode 106 a and thelower electrode 106 b may serve as a capacitance insulating layer of thecircuit storage capacitor Cst. Moreover, in this embodiment, the upperelectrode 106 a is connected with the corresponding drain electrode D,and the lower electrode 106 b is a common electrode, for example.

Furthermore, in this embodiment, the circuit storage capacitors Cst areset to have the same size. Nevertheless, the invention is not limitedthereto. Generally, the size of the circuit storage capacitor is relatedto a characteristic of the light emitting diode. Therefore, the circuitstorage capacitors may be designed to have different sizes, so as tocompensate for the light emitting characteristics of light emittingdiodes of different colors, for example, to compensate for thedifference in light emitting efficiency.

The first electrodes 104 a are arranged in an array corresponding to thered light emitting units RU, the green light emitting units GU and theblue light emitting units BU. Specifically, one first electrode 104 a iselectrically connected with one light emitting unit, wherein the lightemitting unit may be the red light emitting unit RU, the green lightemitting unit GU or the blue light emitting unit BU. The secondelectrodes 104 b are disposed corresponding to the red light emittingunits RU, the green light emitting units GU and the blue light emittingunits BU, and are in parallel to the data lines DL. Specifically, eachsecond electrode 104 b is electrically connected with the red lightemitting units RU, the green light emitting units GU or the blue lightemitting units BU.

In this embodiment, the first electrodes 104 a and the second electrodes104 b are both located above the transistors T. Specifically, in thisembodiment, each first electrode 104 a is electrically connected withthe corresponding transistor T via a contact opening H disposed in theinsulating layer BP, and each second electrode 104 b is located on asurface of the insulating layer BP. Moreover, in this embodiment, thefirst electrode 104 a and the second electrode 104 b partially orcompletely overlap the corresponding transistor T. More specifically,the first electrode 104 a and the second electrode 104 b may partiallyoverlap the corresponding circuit storage capacitor Cst. However, inother embodiments, the first electrode 104 a and the second electrode104 b may completely overlap the corresponding circuit storage capacitorCst.

In addition, in this embodiment, the first electrode 104 a is positiveelectrode, and a material of the first electrode 104 a is (but notlimited to): copper, titanium, nickel, silver, gold, indium, or othersuitable conductive materials; while the second electrode 104 b isnegative electrode, and a material of the second electrode 104 b is (butnot limited to): copper, titanium, nickel, silver, gold, indium, orother suitable conductive materials, for example. From another aspect,in this embodiment, the first electrode 104 a is a P type electrodewhile the second electrode 104 b is an N type electrode, for example.Furthermore, in this embodiment, the second electrode 104 b is a groundelectrode, for example.

Each red light emitting unit RU, each green light emitting unit GU andeach blue light emitting unit BU have similar structures, connectionrelationships, and arrangement relationships, and a main differencetherebetween lies in that: each red light emitting unit RU includes afirst red light emitting diode R1, a second red light emitting diode R2and a third red light emitting diode R3; each green light emitting unitGU includes a first green light emitting diode G1, a second green lightemitting diode G2 and a third green light emitting diode G3; and eachblue light emitting unit BU includes a first blue light emitting diodeB1, a second blue light emitting diode B2 and a third blue lightemitting diode B3. Based on the above, one red light emitting unit RU isdescribed hereinafter as an example. From the following description ofthe red light emitting unit RU, those skilled in the art should be ableto understand the structures, connection relationships, and arrangementrelationships of the green light emitting unit GU and the blue lightemitting unit BU.

It should be noted that the red light emitting unit RU, the green lightemitting unit GU and the blue light emitting unit BU of this embodimentrespectively include three light emitting diodes. Nevertheless, theinvention is not limited thereto. The scope of the invention covers anycase where the red light emitting unit RU, the green light emitting unitGU and the blue light emitting unit BU respectively include a pluralityof light emitting diodes. For example, the red light emitting unit RU,the green light emitting unit GU and the blue light emitting unit BU mayrespectively include two, four, five, or more light emitting diodes.

In this embodiment, the first red light emitting diode R1, the secondred light emitting diode R2 and the third red light emitting diode R3 ofthe red light emitting unit RU are together electrically connected withthe corresponding transistor T. That is, in this embodiment, the firstred light emitting diode R1, the second red light emitting diode R2 andthe third red light emitting diode R3 of the red light emitting unit RUare driven by the same transistor T.

In this embodiment, the first red light emitting diode R1, the secondred light emitting diode R2, and/or the third red light emitting diodeR3 of the red light emitting unit RU may all be located above thecorresponding circuit storage capacitor Cst. Specifically, two lightemitting diodes (i.e., the second red light emitting diode R2 and thethird red light emitting diode R3) of the red light emitting unit RU ofthis embodiment partially overlap the corresponding circuit storagecapacitor Cst. Nevertheless, the invention is not limited thereto. Thescope of the invention covers any case where at least one of the lightemitting diodes of the red light emitting unit RU overlaps thecorresponding circuit storage capacitor Cst. Those skilled in the artshould understand that the aforementioned overlap may refer to completeoverlap or partial overlap.

In this embodiment, the first red light emitting diode R1, the secondred light emitting diode R2 and the third red light emitting diode R3are arranged side by side along the extension direction of the data lineDL. Moreover, in this embodiment, the second red light emitting diode R2is disposed between the first red light emitting diode R1 and the thirdred light emitting diode R3. In addition, in this embodiment, the firstred light emitting diode R1, the second red light emitting diode R2 andthe third red light emitting diode R3 are respectively electricallyconnected with the first electrode 104 a and the second electrode 104 bcorresponding thereto. That is, the first red light emitting diode R1,the second red light emitting diode R2 and the third red light emittingdiode R3 respectively overlap a portion of the first electrode 104 a andrespectively overlap a portion of the second electrode 104 b.

From another aspect, in this embodiment, the first electrode 104 a andthe second electrode 104 b are respectively located on the same side ofthe first red light emitting diode R1, on the same side of the secondred light emitting diode R2, and on the same side of the third red lightemitting diode R3. That is, in this embodiment, the first red lightemitting diode R1, the second red light emitting diode R2 and the thirdred light emitting diode R3 are flip-chip micro light emitting diodes.In an embodiment, the flip-chip micro light emitting diode has a lengthof 1 μm to 1000 μm, a width of 1 μm to 1000 μm, and a height of 0.5 μmto 500 μm, for example. In another embodiment, the flip-chip micro lightemitting diode has a length of 1 μm to 100 μm, a width of 1 μm to 100μm, and a height of 0.5 μm to 30 μm, for example.

It should be noted that, in this embodiment, at least one of the firstred light emitting diode R1, the second red light emitting diode R2 andthe third red light emitting diode R3 of each red light emitting unitRU, at least one of the first green light emitting diode G1, the secondgreen light emitting diode G2 and the third green light emitting diodeG3 of each green light emitting unit GU, and at least one of the firstblue light emitting diode B1, the second blue light emitting diode B2and the third blue light emitting diode B3 of each blue light emittingunit BU overlap the corresponding circuit storage capacitor Cst.Thereby, the display device 10 has favorable space utilization, so as tosimplify the layout.

Moreover, in this embodiment, each red light emitting unit RU includesthe first red light emitting diode R1, the second red light emittingdiode R2 and the third red light emitting diode R3 electricallyconnected with one another, each green light emitting unit GU includesthe first green light emitting diode G1, the second green light emittingdiode G2 and the third green light emitting diode G3 electricallyconnected with one another, and each blue light emitting unit BUincludes the first blue light emitting diode B1, the second blue lightemitting diode B2 and the third blue light emitting diode B3electrically connected with one another, and thereby the display device10 is able to provide a favorable repair function, so as to improveproduct utilization and reduce the costs. For example, if the first redlight emitting diode R1 of the red light emitting unit RU is damaged anddoes not function, a laser repair device may electrically insulate thedamaged first red light emitting diode R1 from the second red lightemitting diode R2 and the third red light emitting diode R3, so as toachieve the repair function.

In this embodiment, the opposite substrate 110 includes a substrate 112,and a shielding pattern layer BM, a color filter layer CF and awavelength conversion layer WT disposed on the substrate 112.Nevertheless, the invention is not limited thereto. In otherembodiments, only the wavelength conversion layer WT or only the colorfilter layer CF may be disposed on the substrate 112.

The shielding pattern layer BM is disposed corresponding to the scanlines SL, the data lines DL and the color filter layer CF (detailsthereof will be described later), for example. Specifically, in thisembodiment, the shielding pattern layer BM overlaps the scan line SL andthe data line DL spatially. However, those skilled in the art shouldunderstand that the shielding pattern layer BM may completely orpartially overlap the scan lines SL and the data lines DL. Moreover, amaterial of the shielding pattern layer BM includes (but not limitedto): a low-reflective material, such as a black resin or a shieldingmaterial, for example.

In this embodiment, the color filter layer CF includes a plurality ofred filter patterns RCF, a plurality of green filter patterns GCF and aplurality of blue filter patterns BCF, wherein the red filter patternsRCF, the green filter patterns GCF and the blue filter patterns BCF aredisposed respectively corresponding to the red light emitting units RU,the green light emitting units GU and the blue light emitting units BU.From another aspect, the shielding pattern layer BM is disposed aroundthe red filter patterns RCF, the green filter patterns GCF and the bluefilter patterns BCF. Moreover, the red filter pattern RCF, the greenfilter pattern GCF and the blue filter pattern BCF may be any filterpattern that is commonly known to those skilled in the art.

In this embodiment, the wavelength conversion layer WT may be disposedon the color filter layer CF and arranged corresponding to the colorfilter layer CF. That is, the shielding pattern layer BM is alsodisposed around the wavelength conversion layer WT. In addition, thematerial of the wavelength conversion layer WT, for example, includes(but is not limited to): a quantum dot material, a fluorescent powdermaterial, a phosphor powder material, or a combination of the foregoingmaterials.

It should be noted that although the opposite substrate 110 of thisembodiment includes the shielding pattern layer BM, the color filterlayer CF and the wavelength conversion layer WT disposed on thesubstrate 112, the invention is not limited thereto. In otherembodiments, the opposite substrate 110 may be any opposite substratethat is commonly known to those skilled in the art. Moreover, althoughin this embodiment, the display device 10 includes the oppositesubstrate 110, the invention is not limited thereto. In otherembodiments, the display device 10 may not include the oppositesubstrate.

A partial equivalent circuit diagram of the display device 10 is shownin FIG. 3. FIG. 3 illustrates one red light emitting unit RU as anexample. Likewise, those skilled in the art should be able to infer theequivalent circuit diagrams related to the green light emitting unit GUand the blue light emitting unit BU from the following description ofFIG. 3.

Referring to FIG. 3, the transistor T is electrically connected with thescan line SL, the data line DL and the red light emitting unit RU.Specifically, the gate electrode G of the transistor T is electricallyconnected with the scan line SL, the source electrode S of thetransistor T is electrically connected with the data line DL, and thedrain electrode D of the transistor T is electrically connected withpositive electrodes of the first red light emitting diode R1, the secondred light emitting diode R2 and the third red light emitting diode R3 ofthe red light emitting unit RU. In addition, in this embodiment, thefirst red light emitting diode R1, the second red light emitting diodeR2 and the third red light emitting diode R3 of the red light emittingunit RU are connected in parallel.

It should be noted that although in the display device 10, the lightemitting diodes are driven by one transistor T, the invention is notlimited thereto. Hereinafter, other embodiments are described withreference to FIG. 4 and FIG. 5.

FIG. 4 is a partial equivalent circuit diagram of the display deviceaccording to the second embodiment of the invention. Referring to FIG. 4and FIG. 3, a display device 20 of this embodiment is substantiallysimilar to the display device 10 of FIG. 3. Therefore, the same orsimilar reference numerals are used to represent the same or similarcomponents and details thereof can be found in the above description andthus are omitted. The difference between the display device 20 and thedisplay device 10 is described hereinafter.

Referring to FIG. 4, the display device 20 includes a transistor T2which is electrically connected with the scan line SL, the data line DLand the transistor T. Specifically, a gate electrode G2 of thetransistor T2 is electrically connected with the scan line SL, a sourceelectrode S2 of the transistor T2 is electrically connected with thedata line DL, and a drain electrode D2 of the transistor T2 iselectrically connected with the gate electrode G of the transistor T.Moreover, the source electrode S of the transistor T is electricallyconnected with a power supply voltage V_(dd), and the drain electrode Dof the transistor T is electrically connected with the positiveelectrodes of the first red light emitting diode R1, the second redlight emitting diode R2 and the third red light emitting diode R3 of thered light emitting unit RU. In addition, the negative electrodes of thefirst red light emitting diode R1, the second red light emitting diodeR2 and the third red light emitting diode R3 of the red light emittingunit RU are electrically connected with a power supply voltage V_(ss).From another aspect, in this embodiment, the transistor T2 is a switchdevice, for example.

FIG. 5 is a partial equivalent circuit diagram of the display deviceaccording to the third embodiment of the invention. Referring to FIG. 5and FIG. 4, a display device 30 of this embodiment is similar to thedisplay device 20 of FIG. 4. Therefore, the same or similar referencenumerals are used to represent the same or similar components anddetails thereof can be found in the above description and thus areomitted. The difference between the display device 30 and the displaydevice 20 is described hereinafter.

Referring to FIG. 5, the display device 30 includes a current sourcecircuit I. Specifically, the negative electrodes of the first red lightemitting diode R1, the second red light emitting diode R2 and the thirdred light emitting diode R3 of the red light emitting unit RU areelectrically connected with the current source circuit I to beelectrically connected with an external circuit IC.

According to the aforementioned embodiments, the light emitting diodesin the display devices 10 to 30 are flip-chip micro light emittingdiodes. However, the invention is not limited thereto. In otherembodiments, the light emitting diodes in the display devices may bevertical micro light emitting diodes. Details are described hereinafterwith reference to FIG. 6 and FIG. 7.

FIG. 6 is a partial top view of the display device according to thefourth embodiment of the invention. FIG. 7 is a partial cross-sectionalview of the display device according to the fourth embodiment of theinvention. Referring to FIG. 6 to FIG. 7 and FIG. 1 to FIG. 2, a displaydevice 40 of this embodiment is similar to the display device 10 of FIG.1 to FIG. 2. The main difference lies in the connection relationshipamong the light emitting diodes of each light emitting unit. Therefore,the same or similar reference numerals are used to represent the same orsimilar components and details thereof can be found in the abovedescription and thus are omitted. The difference between the displaydevice 40 and the display device 10 is described hereinafter. It shouldbe noted that although FIG. 6 and FIG. 7 both illustrate one red lightemitting unit RU as an example, those skilled in the art should be ableto infer the layout of the display device 40, which includes a pluralityof red light emitting units RU, a plurality of green light emittingunits GU and a plurality of blue light emitting units BU, from thedisclosure of FIG. 1 and FIG. 2. Further, from the following descriptionof FIG. 6 and FIG. 7, those skilled in the art should be able tounderstand the structures, connection relationships, and arrangementrelationships of the green light emitting units GU and the blue lightemitting units BU. Moreover, the opposite substrate 110 is omitted fromFIG. 6 and FIG. 7.

Referring to FIG. 6 and FIG. 7, the array substrate 100 of the displaydevice 40 further includes a first electrode 404 a, a second electrode404 b, a third electrode 404 c and an insulating layer BP2 disposed onthe substrate 102.

In this embodiment, the insulating layer BP2 is disposed among the firstelectrode 404 a, the second electrode 404 b and the third electrode 404c, and the third electrode 404 c is connected with the second electrode404 b via a first contact opening H1 disposed in the insulating layerBP2. The insulating layer BP2 may be used for stabilizing the positionof the red light emitting unit RU, so as to properly dispose the redlight emitting unit RU on the array substrate 100. A material of theinsulating layer BP2 includes (but not limited to): glue, resin, siliconoxide, silicon nitride or underfiller, for example. Moreover, the firstcontact opening H1 is not necessarily at the position illustrated inFIG. 6. Those skilled in the art should understand that, according todifferent design requirements, the first contact opening H1 may bedisposed at any position for connecting the third electrode 404 c andthe second electrode 404 b. For example, in FIG. 6, the first contactopening H1 may be located above the upper electrode 106 a, or the firstcontact opening H1 may be at a position other than the position abovethe upper electrode 106 a.

In this embodiment, the first electrode 404 a and the third electrode404 c are located on two opposite sides of the first red light emittingdiode R1 of the red light emitting unit RU; the second electrode 404 band the third electrode 404 c are located on two opposite sides of thesecond red light emitting diode R2 of the red light emitting unit RU;and the first electrode 404 a and the third electrode 404 c are locatedon two opposite sides of the third red light emitting diode R3 of thered light emitting unit RU.

From another aspect, in this embodiment, the first electrode 404 a iselectrically connected with the first red light emitting diode R1 andthe third red light emitting diode R3; the second electrode 404 b iselectrically connected with the second red light emitting diode R2; thethird electrode 404 c is electrically connected with the first red lightemitting diode R1, the second red light emitting diode R2 and the thirdred light emitting diode R3; and the third electrode 404 c iselectrically connected with the second electrode 404 b via the firstcontact opening H1. That is, in this embodiment, the first red lightemitting diode R1, the second red light emitting diode R2 and the thirdred light emitting diode R3 are electrically connected with one anothervia the first electrode 404 a, the second electrode 404 b and the thirdelectrode 404 c. Further, in this embodiment, the second red lightemitting diode R2 and the third red light emitting diode R3 areconnected in series while being connected in parallel with the first redlight emitting diode R1.

It should be noted that, in this embodiment, the second red lightemitting diode R2 and the third red light emitting diode R3 areconnected in series while being connected in parallel with the first redlight emitting diode R1, so as to reduce the probability of failure ofthe display device 40, which may result from short circuit or opencircuit, and thereby improve the overall production efficiency.

In addition, in this embodiment, the first electrode 404 a and thesecond electrode 404 b are positive electrodes, and a material thereofis (but not limited to): copper, titanium, nickel, silver, gold, indium,or other suitable conductive materials; while the third electrode 404 cis negative electrode, and a material thereof is (but not limited to):copper, titanium, nickel, silver, gold, indium, or other suitableconductive materials, for example. From another aspect, in thisembodiment, the first electrode 404 a and the second electrode 404 b areP type electrodes while the third electrode 404 c is an N typeelectrode, for example. Furthermore, in this embodiment, the thirdelectrode 404 c is a common electrode electrically connected with apower supply voltage, for example. Moreover, the arrangement of thethird electrode 404 c is not limited to the disclosure of FIG. 6. Thoseskilled in the art should understand that, according to different designrequirements, the third electrode 404 c may adopt other configurationsand connection forms to be electrically connected with the power supplyvoltage.

It should be noted that, in this embodiment, as described above, withthe red light emitting unit RU that includes the first red lightemitting diode R1, the second red light emitting diode R2 and the thirdred light emitting diode R3 electrically connected with one another, thedisplay device 40 is able to provide a favorable repair function, so asto improve product utilization and reduce the costs. For example, if thesecond red light emitting diode R2 of the red light emitting unit RU isdamaged and does not function, since the second red light emitting diodeR2 is connected in parallel with the first red light emitting diode R1,the first red light emitting diode R1 remains functioning. Thus, therepair function is achieved.

Moreover, in this embodiment, the first electrode 404 a, the secondelectrode 404 b and the third electrode 404 c are all located above thetransistor T. Specifically, in this embodiment, the first electrode 404a is electrically connected with the transistor T via a second contactopening 112 disposed in the insulating layer BP; the second electrode404 b is located on a surface of the insulating layer BP; and the thirdelectrode 404 c is located on the surface of the insulating layer BP2and a portion thereof is connected with the second electrode 404 b viathe first contact opening H1. In addition, although the first electrode404 a is electrically connected with the transistor T via the secondcontact opening H2 that overlaps the first red light emitting diode R1in this embodiment, the invention is not limited thereto. In otherembodiments, the first electrode 404 a may be electrically connectedwith the transistor T via a contact opening that overlaps the third redlight emitting diode R3. Furthermore, although in this embodiment thefirst electrode 404 a is a continuous conductive pattern that is incontact with both the first red light emitting diode R1 and the thirdred light emitting diode R3 and is electrically connected with thetransistor T via one contact opening (i.e., the second contact openingH2), the invention is not limited thereto. In other embodiments, thefirst electrode 404 a may be two independent conductive patterns thatare respectively in contact with the first red light emitting diode R1and the third red light emitting diode R3 and are electrically connectedwith the transistor T via two contact openings. Further, in thisembodiment, the first electrode 404 a, the second electrode 404 b andthe third electrode 404 c may partially or completely overlap thetransistor T.

Besides, in this embodiment, the first red light emitting diode R1, thesecond red light emitting diode R2 and the third red light emittingdiode R3 of the red light emitting unit RU all overlap the correspondingcircuit storage capacitor Cst. Nevertheless, the invention is notlimited thereto. The scope of the invention covers any case where atleast one of the light emitting diodes of the red light emitting unit RUoverlaps the corresponding circuit storage capacitor Cst. Those skilledin the art should understand that the aforementioned overlap may referto complete overlap or partial overlap. For example, the area of thelower electrode 106 b may be reduced to only completely overlap thesecond red light emitting diode R2 and the third red light emittingdiode R3, such that only two of the light emitting diodes of the redlight emitting unit RU overlap the corresponding circuit storagecapacitor Cst.

It should be noted that, in this embodiment, as described above, atleast one of the first red light emitting diode R1, the second red lightemitting diode R2 and the third red light emitting diode R3 of the redlight emitting unit RU overlaps the corresponding circuit storagecapacitor Cst. Thereby, the display device 40 has favorable spaceutilization, so as to simplify the layout.

Additionally, a partial equivalent circuit diagram of the display device40 is illustrated in FIG. 8. Likewise, although one red light emittingunit RU is illustrated in FIG. 8 as an example, those skilled in the artshould be able to infer the equivalent circuit diagrams of the greenlight emitting unit GU and the blue light emitting unit BU that may beincluded in the display device 40 from the disclosure of FIG. 1 and FIG.2 and the following description of FIG. 8.

Referring to FIG. 8, the transistor T is electrically connected with thescan line SL, the data line DL and the red light emitting unit RU.Specifically, the gate electrode G of the transistor T is electricallyconnected with the scan line SL, the source electrode S of thetransistor T is electrically connected with the data line DL, and thedrain electrode D of the transistor T is electrically connected with thepositive electrodes of the first red light emitting diode R1 and thethird red light emitting diode R3 of the red light emitting unit RU.Moreover, in this embodiment, the negative electrode of the third redlight emitting diode R3 is electrically connected with the positiveelectrode of the second red light emitting diode R2. That is, in thisembodiment, the second red light emitting diode R2 and the third redlight emitting diode R3 are connected in series while being connected inparallel with the first red light emitting diode R1.

It should be noted that although in the display device 40, the lightemitting diodes are driven by one transistor T, the invention is notlimited thereto. Hereinafter, other embodiments are described withreference to FIG. 9 and FIG. 10.

FIG. 9 is a partial equivalent circuit diagram of the display deviceaccording to the fifth embodiment of the invention. Referring to FIG. 9and FIG. 8, a display device 50 of this embodiment is similar to thedisplay device 40 of FIG. 8. Therefore, the same or similar referencenumerals are used to represent the same or similar components anddetails thereof can be found in the above description and thus areomitted. The difference between the display device 50 and the displaydevice 40 is described hereinafter.

Referring to FIG. 9, the display device 50 includes a transistor T3which is electrically connected with the scan line SL, the data line DLand the transistor T. Specifically, a gate electrode G3 of thetransistor T3 is electrically connected with the scan line SL, a sourceelectrode S3 of the transistor T3 is electrically connected with thedata line DL, and a drain electrode D3 of the transistor T3 iselectrically connected with the gate electrode G of the transistor T.Moreover, the source electrode S of the transistor T is electricallyconnected with a power supply voltage V_(dd), and the drain electrode Dof the transistor T is electrically connected with the positiveelectrodes of the first red light emitting diode R1 and the third redlight emitting diode R3 of the red light emitting unit RU. In addition,the negative electrodes of the first red light emitting diode R1 and thesecond red light emitting diode R2 of the red light emitting unit RU areelectrically connected with a power supply voltage V_(ss). From anotheraspect, in this embodiment, the transistor T3 is a switch device, forexample.

FIG. 10 is a partial equivalent circuit diagram of the display deviceaccording to the sixth embodiment of the invention. Referring to FIG. 10and FIG. 9, a display device 60 of this embodiment is similar to thedisplay device 50 of FIG. 9. Therefore, the same or similar referencenumerals are used to represent the same or similar components anddetails thereof can be found in the above description and thus areomitted. The difference between the display device 60 and the displaydevice 50 is described hereinafter.

Referring to FIG. 10, the display device 60 includes a current sourcecircuit I. Specifically, the negative electrodes of the first red lightemitting diode R1 and the second red light emitting diode R2 of the redlight emitting unit RU are electrically connected with the currentsource circuit I to be electrically connected with the external circuitIC.

Besides, although the transistor T is described as a bottom gatetransistor as an example in the above first to sixth embodiments, theinvention is not limited thereto. In other embodiments, the transistor Tmay be a top gate transistor, as shown in FIG. 11.

Referring to FIG. 11, the gate electrode G is located above the channellayer CH. The source region SR, the drain region DR and the channellayer CH are formed in a semiconductor layer, wherein the material ofthe semiconductor layer is polysilicon. That is, in this embodiment, thetransistor T is a low-temperature polysilicon thin film transistor. Thegate insulating layer GI is located between the semiconductor layer andthe gate electrode G. The source region SR is electrically connectedwith a source metal layer SM via a contact V1 formed in the gateinsulating layer GI, an insulating layer BP4 and an insulating layerBP5, and the source metal layer SM is further electrically connectedwith the data line DL. The drain region DR is electrically connectedwith a drain metal layer DM via a contact V2 formed in the gateinsulating layer GI, the insulating layer BP4 and the insulating layerBP5.

Moreover, in this embodiment, the circuit storage capacitor Cst may beformed by connecting in series a first sub storage capacitor C1 formedof a conductive pattern LS and a conductive pattern M1, a second substorage capacitor C2 formed of the conductive pattern M1 and the sourcemetal layer SM, and a third sub storage capacitor C3 formed of thesource metal layer SM and a first electrode 704 a. An insulating layerBP3 and the gate insulating layer GI located between the conductivepattern LS and the conductive pattern M1 serve as a capacitanceinsulating layer of the first sub storage capacitor C1; the insulatinglayer BP4 and the insulating layer BP5 located between the conductivepattern M1 and the source metal layer SM serve as a capacitanceinsulating layer of the second sub storage capacitor C2; and aninsulating layer BP6 and an insulating layer BP7 located between thesource metal layer SM and the first electrode 704 a serve as acapacitance insulating layer of the third sub storage capacitor C3. Inthis embodiment, the conductive pattern LS may be a shielding material.In this embodiment, the conductive pattern M1 and the gate electrode Gbelong to the same film layer. That is, the conductive pattern M1 andthe gate electrode G are formed of the same material. Furthermore, inthis embodiment, the conductive pattern M1 is a common electrode, forexample.

Besides, although the above first to sixth embodiments illustrate thateach light emitting unit includes three light emitting diodes as anexample, the invention is not limited thereto. In other embodiments,each light emitting unit may include four light emitting diodes, asshown in FIG. 12 and FIG. 13.

FIG. 12 is a partial equivalent circuit diagram of the display deviceaccording to the eighth embodiment of the invention. FIG. 13 is adiagram of an area X in FIG. 12. Referring to FIG. 12 and FIG. 4 or FIG.9, a display device 80 of this embodiment is similar to the displaydevice 20 of FIG. 4 or the display device 50 of FIG. 9. The maindifference lies in that: in the display device 80, a red light emittingunit 8RU includes four red light emitting diodes, i.e., a first redlight emitting diode 8R1, a second red light emitting diode 8R2, a thirdred light emitting diode 8R3 and a fourth red light emitting diode 8R4;while in the display device 20 or the display device 50, one red lightemitting unit RU includes three red light emitting diodes, i.e., thefirst red light emitting diode R1, the second red light emitting diodeR2 and the third red light emitting diode R3. Therefore, the same orsimilar reference numerals are used to represent the same or similarcomponents and details thereof can be found in the above description andthus are omitted. The difference between the display device 80 and thedisplay device 20 or 50 is described hereinafter.

Referring to FIG. 12 and FIG. 13, in this embodiment, the first redlight emitting diode 8R1 and the second red light emitting diode 8R2 areconnected in parallel, and the third red light emitting diode 8R3 andthe fourth red light emitting diode 8R4 are connected in parallel.Besides, the first red light emitting diode 8R1 and the second red lightemitting diode 8R2 that are connected in parallel and the third redlight emitting diode 8R3 and the fourth red light emitting diode 8R4that are connected in parallel are connected in series. That is, in thisembodiment, the first red light emitting diode 8R1, the second red lightemitting diode 8R2, the third red light emitting diode 8R3 and thefourth red light emitting diode 8R4 of the red light emitting unit 8RUare electrically connected with one another by a combination of parallelconnection and series connection.

Further, in this embodiment, the first red light emitting diode 8R1 iselectrically connected with a first electrode 804 a 1 and a secondelectrode 804 b 1, the second red light emitting diode 8R2 iselectrically connected with a first electrode 804 a 2 and a secondelectrode 804 b 2, the third red light emitting diode 8R3 iselectrically connected with a first electrode 804 a 3 and a secondelectrode 804 b 3, and the fourth red light emitting diode 8R4 iselectrically connected with a first electrode 804 a 4 and a secondelectrode 804 b 4. Specifically, in this embodiment, the first electrode804 a 1 and the first electrode 804 a 2 are connected in parallel whilebeing electrically connected with the drain D electrode of thetransistor T, for example. The second electrode 804 b 3 and the secondelectrode 804 b 4 are connected in parallel while being electricallyconnected with the power supply voltage V_(ss). The second electrode 804b 1, the second electrode 804 b 2, the first electrode 804 a 3 and thefirst electrode 804 a 4 are connected in series with one another. Thatis, in this embodiment, the first red light emitting diode 8R1, thesecond red light emitting diode 8R2, the third red light emitting diode8R3 and the fourth red light emitting diode 8R4 of the red lightemitting unit 8RU are electrically connected with one another via thefirst electrodes 804 a 1 to 804 a 4 and the second electrodes 804 b 1 to804 b 4.

In this embodiment, the first electrodes 804 a 1 to 804 a 4 are positiveelectrodes while the second electrodes 804 b 1 to 804 b 4 are negativeelectrodes, for example. From another aspect, in this embodiment, thefirst electrodes 804 a 1 to 804 a 4 are P type electrodes and the secondelectrodes 804 b 1 to 804 b 4 are N type electrodes, for example.

It should be noted that, in this embodiment, the first red lightemitting diode 8R1 and the second red light emitting diode 8R2 areconnected in parallel, the third red light emitting diode 8R3 and thefourth red light emitting diode 8R4 are connected in parallel, and thefirst red light emitting diode 8R1 and the second red light emittingdiode 8R2 that are connected in parallel and the third red lightemitting diode 8R3 and the fourth red light emitting diode 8R4 that areconnected in parallel are connected in series. Accordingly, theprobability of failure of the display device 80, which may result fromshort circuit or open circuit, is reduced so as to improve the overallproduction efficiency.

Further, in this embodiment, with the red light emitting unit 8RU thatincludes the first red light emitting diode 8R1, the second red lightemitting diode 8R2, the third red light emitting diode 8R3 and thefourth red light emitting diode 8R4 electrically connected with oneanother, the display device 80 is able to provide a favorable repairfunction, so as to improve product utilization and reduce the costs. Forexample, if the second red light emitting diode 8R2 of the red lightemitting unit 8RU is damaged and does not function, since the second redlight emitting diode 8R2 is connected in parallel with the first redlight emitting diode 8R1, the first red light emitting diode 8R1 remainsfunctioning. Thus, the repair function is achieved.

Moreover, as described above, at least one of the first red lightemitting diode 8R1, the second red light emitting diode 8R2, the thirdred light emitting diode 8R3 and the fourth red light emitting diode 8R4of the red light emitting unit 8RU overlaps the corresponding circuitstorage capacitor Cst. Thereby, the display device 80 has favorablespace utilization, so as to simplify the layout. Nevertheless, in otherembodiments, the first red light emitting diode 8R1, the second redlight emitting diode 8R2, the third red light emitting diode 8R3 and thefourth red light emitting diode 8R4 in the display device 80 may notoverlap the corresponding circuit storage capacitor Cst.

In addition, although the red light emitting unit 8RU includes fourlight emitting diodes and the four light emitting diodes are connectedin parallel in groups of two and then connected in series to beelectrically connected with one another in this embodiment, theinvention is not limited thereto. In other embodiments, the red lightemitting unit 8RU may include more than four light emitting diodes,e.g., five light emitting diodes, as long as these light emitting diodesare electrically connected with one another by a combination of parallelconnection and series connection.

Besides, although the above first to sixth embodiments illustrate thateach light emitting unit includes three light emitting diodes as anexample, the invention is not limited thereto. In other embodiments,each light emitting unit may include two light emitting diodes, as shownin FIG. 14 and FIG. 15.

FIG. 14 is a partial equivalent circuit diagram of the display deviceaccording to the ninth embodiment of the invention. FIG. 15 is a diagramof an area Y in FIG. 14. Referring to FIG. 14 and FIG. 4 or FIG. 9, adisplay device 90 of this embodiment is similar to the display device 20of FIG. 4 or the display device 50 of FIG. 9. The main difference liesin that: in the display device 90, a red light emitting unit 9RUincludes two red light emitting diodes, i.e., a first red light emittingdiode 9R1 and a second red light emitting diode 9R2; while in thedisplay device 20 or the display device 50, one red light emitting unitRU includes three red light emitting diodes, i.e., the first red lightemitting diode R1, the second red light emitting diode R2 and the thirdred light emitting diode R3. Therefore, the same or similar referencenumerals are used to represent the same or similar components anddetails thereof can be found in the above description and thus areomitted. The difference between the display device 90 and the displaydevice 20 or 50 is described hereinafter.

Referring to FIG. 14 and FIG. 15, in this embodiment, the first redlight emitting diode 9R1 is electrically connected with a firstelectrode 904 a 1, a second electrode 904 b 1 and a third electrode 904c 1 while the second red light emitting diode 9R2 is electricallyconnected with a first electrode 904 a 2, a second electrode 904 b 2 anda third electrode 904 c 2. In this embodiment, the first electrode 904 a1, the second electrode 904 b 1, the first electrode 904 a 2 and thesecond electrode 904 b 2 are positive electrodes while the thirdelectrode 904 c 1 and the third electrode 904 c 2 are negativeelectrodes, for example. From another aspect, in this embodiment, thefirst electrode 904 a 1, the second electrode 904 b 1, the firstelectrode 904 a 2 and the second electrode 904 b 2 are P type electrodeswhile the third electrode 904 c 1 and the third electrode 904 c 2 are Ntype electrodes, for example.

Besides, in this embodiment, the first red light emitting diode 9R1includes sub light emitting diodes, e.g., a sub red light emitting diodeSR1 and a sub red light emitting diode SR2; and the second red lightemitting diode 9R2 includes sub light emitting diodes, e.g., a sub redlight emitting diode SR3 and a sub red light emitting diode SR4.Specifically, in this embodiment, the sub red light emitting diode SR1is electrically connected with the first electrode 904 a 1 and the thirdelectrode 904 c 1, the sub red light emitting diode SR2 is electricallyconnected with the second electrode 904 b 1 and the third electrode 904c 1, the sub red light emitting diode SR3 is electrically connected withthe first electrode 904 a 2 and the third electrode 904 c 2, and the subred light emitting diode SR4 is electrically connected with the secondelectrode 904 b 2 and the third electrode 904 c 2. That is, in thisembodiment, the first red light emitting diode 9R1 and the second redlight emitting diode 9R2 respectively have two independent lightemitting regions. Therefore, with the aforementioned first red lightemitting diode that includes two independent light emitting regions, forexample, there is no need to dispose multiple red light emitting diodesto form multiple light emitting regions. Thus, the number of the lightemitting diodes may be reduced to lower the costs, which is applicableto a high-resolution display device.

Furthermore, in this embodiment, the first electrode 904 a 1 and thesecond electrode 904 b 1 are connected in parallel while beingelectrically connected with the drain electrode D of the transistor T,for example. The first electrode 904 a 2 and the second electrode 904 b2 are connected in parallel, and the third electrode 904 c 1 isconnected in series with the first electrode 904 a 2 and the secondelectrode 904 b 2 that are connected in parallel. Moreover, the thirdelectrode 904 c 2 is electrically connected with the power supplyvoltage V_(ss). Accordingly, the sub red light emitting diode SR1 andthe sub red light emitting diode SR2 are connected in parallel, the subred light emitting diode SR3 and the sub red light emitting diode SR4are connected in parallel, and the sub red light emitting diode SR1 andthe sub red light emitting diode SR2 that are connected in parallel andthe sub red light emitting diode SR3 and the sub red light emittingdiode SR4 that are connected in parallel are connected in series. Thatis, in this embodiment, the first electrode 904 a 1, the secondelectrode 904 b 1, the third electrode 904 c 1, the first electrode 904a 2, the second electrode 904 b 2 and the third electrode 904 c 2 areconfigured by a combination of parallel connection and seriesconnection, so as to electrically connect the sub red light emittingdiode SR1, the sub red light emitting diode SR2, the sub red lightemitting diode SR3 and the sub red light emitting diode SR4 of the redlight emitting unit 9RU with one another.

It should be noted that, in this embodiment, the first electrode 904 a1, the second electrode 904 b 1, the third electrode 904 c 1, the firstelectrode 904 a 2, the second electrode 904 b 2 and the third electrode904 c 2 are configured by a combination of parallel connection andseries connection, such that the sub red light emitting diode SR1 andthe sub red light emitting diode SR2 are connected in parallel, the subred light emitting diode SR3 and the sub red light emitting diode SR4are connected in parallel, and the sub red light emitting diode SRI andthe sub red light emitting diode SR2 that are connected in parallel andthe sub red light emitting diode SR3 and the sub red light emittingdiode SR4 that are connected in parallel are connected in series.Thereby, the probability of failure of the display device 90, which mayresult from short circuit or open circuit, is reduced so as to improvethe overall production efficiency.

Further, in this embodiment, with the red light emitting unit 9RU thatincludes the sub red light emitting diodes SR1 to SR4 electricallyconnected with one another, the display device 90 is able to provide afavorable repair function, so as to improve product utilization andreduce the costs. For example, if the sub red light emitting diode SR2of the red light emitting unit 9RU is damaged and does not function,since the sub red light emitting diode SR2 is connected in parallel withthe sub red light emitting diode SR1, the sub red light emitting diodeSR1 remains functioning. Thus, the repair function is achieved.

Moreover, as described above, at least one of the first red lightemitting diode 9R1 and the second red light emitting diode 9R2 of thered light emitting unit 9RU overlaps the corresponding circuit storagecapacitor Cst. Thereby, the display device 90 has favorable spaceutilization, so as to simplify the layout. Nevertheless, in otherembodiments, the first red light emitting diode 9R1 and the second redlight emitting diode 9R2 in the display device 90 may not overlap thecorresponding circuit storage capacitor Cst.

In addition, although the red light emitting unit 9RU includes two redlight emitting diodes (i.e., the first red light emitting diode 9R1 andthe second red light emitting diode 9R2) in this embodiment, theinvention is not limited thereto. In other embodiments, the red lightemitting unit 9RU may include more than two red light emitting diodes,e.g., three red light emitting diodes.

In addition, although the first red light emitting diode 9R1 and thesecond red light emitting diode 9R2 respectively include two sub redlight emitting diodes in this embodiment, the invention is not limitedthereto. In other embodiments, the first red light emitting diode 9R1and the second red light emitting diode 9R2 may respectively includemore than two sub red light emitting diodes, i.e., more than twoindependent light emitting regions.

To conclude, in the display device of the invention, the light emittingunit includes multiple light emitting diodes that are electricallyconnected with one another and are together electrically connected withone transistor. Thus, the display device is able to provide a favorablerepair function and thereby improve product utilization and reduce thecosts. Further, in the display device of the invention, at least one ofthe multiple light emitting diodes, which are together electricallyconnected with one active device, of the light emitting unit is disposedto overlap the capacitor, e.g., the circuit storage capacitor.Accordingly, the display device has favorable space utilization, so asto simplify the layout. In addition, in the display device of theinvention, multiple light emitting diodes of the light emitting unit areelectrically connected with one another by a combination of parallelconnection and series connection, so as to reduce the probability offailure of the display device, which may result from short circuit oropen circuit, and thereby improve the overall production efficiency.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the disclosed embodimentswithout departing from the scope or spirit of the invention. In view ofthe foregoing, it is intended that the invention covers modificationsand variations of this disclosure provided that they fall within thescope of the following claims and their equivalents.

What is claimed is:
 1. A display device, comprising: a substrate; atransistor disposed on the substrate; a capacitor disposed on thesubstrate; a light emitting unit disposed on the substrate and arrangedcorresponding to the capacitor and the transistor, wherein the lightemitting unit comprises a first light emitting diode and a second lightemitting diode; a first electrode in physical contact with andelectrically connected to the first light emitting diode and the secondlight emitting diode; and a second electrode in physical contact withand electrically connected to the first emitting diode and the secondlight emitting diode, wherein the first light emitting diode and thesecond light emitting diode are electrically connected with thetransistor, and at least one of the first light emitting diode and thesecond light emitting diode overlaps the capacitor.
 2. The displaydevice according to claim 1, further comprising a scan line and a dataline disposed on the substrate, wherein an extension direction of thescan line is different from an extension direction of the data line, andthe transistor is electrically connected with the scan line and the dataline.
 3. The display device according to claim 1, wherein the lightemitting unit further comprises a third light emitting diode, and thesecond light emitting diode is disposed between the first light emittingdiode and the third light emitting diode.
 4. The display deviceaccording to claim 3, wherein the first light emitting diode and thesecond light emitting diode are connected in parallel.
 5. The displaydevice according to claim 4, wherein the third light emitting diode isconnected in parallel with the first light emitting diode and the secondlight emitting diode, or the third light emitting diode is connected inseries with the first light emitting diode and the second light emittingdiode.
 6. The display device according to claim 3, wherein the firstelectrode and the second electrode are disposed on the substrate, andwherein the third light emitting diode is in physical contact with andelectrically connected with the first electrode and the secondelectrode.
 7. The display device according to claim 6, wherein the firstelectrode and the second electrode are respectively located on the sameside of the first light emitting diode, the same side of the secondlight emitting diode, and the same side of the third light emittingdiode.
 8. The display device according to claim 3, further comprising athird electrode, wherein the first electrode, the second electrode andthe third electrode are disposed on the substrate, wherein the thirdelectrode and the second electrode are electrically connected with eachother, and the first light emitting diode, the second light emittingdiode and the third light emitting diode are electrically connected withone another via the first electrode, the second electrode and the thirdelectrode.
 9. The display device according to claim 8, furthercomprising an insulating layer disposed on the substrate, wherein theinsulating layer is located among the first electrode, the secondelectrode and the third electrode, and the third electrode iselectrically connected with the second electrode via a first contactopening disposed in the insulating layer.
 10. The display deviceaccording to claim 8, wherein the first light emitting diode and thethird light emitting diode are respectively electrically connected withthe first electrode; the second light emitting diode is electricallyconnected with the second electrode; and the first light emitting diode,the second light emitting diode and the third light emitting diode arerespectively electrically connected with the third electrode.
 11. Thedisplay device according to claim 10, wherein the first electrode andthe third electrode are located on two opposite sides of the first lightemitting diode, the second electrode and the third electrode are locatedon two opposite sides of the second light emitting diode, and the firstelectrode and the third electrode are located on two opposite sides ofthe third light emitting diode.
 12. The display device according toclaim 8, wherein the first electrode is electrically connected with thetransistor via a second contact opening.
 13. The display deviceaccording to claim 8, wherein the capacitor comprises an upper electrodeand a lower electrode, and the transistor comprises a gate electrode, agate insulating layer, a channel layer, a source electrode and a drainelectrode, wherein the upper electrode, the source electrode and thedrain electrode belong to one film layer while the lower electrode andthe gate electrode belong to another film layer.
 14. A display device,comprising: a substrate; a transistor disposed on the substrate; a lightemitting unit disposed on the substrate, wherein the light emitting unitcomprises a plurality of light emitting diodes; a first electrode inphysical contact with and electrically connected to the plurality oflight emitting diodes; and a second electrode in physical contact withand electrically connected to the plurality of light emitting diodes,wherein the light emitting diodes are electrically connected with thetransistor, and at least two of the light emitting diodes are connectedin parallel.
 15. The display device according to claim 14, wherein thelight emitting diodes comprise a first light emitting diode, a secondlight emitting diode and a third light emitting diode, and the firstlight emitting diode and the second light emitting diode are connectedin parallel.
 16. The display device according to claim 15, wherein thethird light emitting diode is connected in parallel or in series withthe first light emitting diode and the second light emitting diode. 17.The display device according to claim 15, wherein the light emittingdiodes further comprise a fourth light emitting diode that is connectedin parallel with the third light emitting diode, and the first lightemitting diode and the second light emitting diode that are connected inparallel and the fourth light emitting diode and the third lightemitting diode that are connected in parallel are connected in series.